Lindsey Sech - Intel Global Communications Group Hello everyone. And welcome to the Technology Update from Intel and Micron. We have some exciting news to share with you today. I am Lindsey Sech with Intel's Global Communications Group. Before we get started, I would like to point your attention to a few legal disclaimers and also read through our Safe Harbor statements. During the course of this presentation, Micron and Intel may make projections or other forward-looking statements. Forward-looking statements are projections and other statements about future events that are based on current expectations and as a result are subject to risks and uncertainties. Following today's keynote, we will have a question-and-session. If you are joining us from the webcast, please submit your question through the Ask a Question button. Now I would like to welcome to the stage Rob Crooke, Senior Vice President & General Manager of Intel's Non-Volatile Memory Solutions Group; and Mark Durcan, CEO of Micron. Rob Crooke - SVP and GM, Intel Non-Volatile Memory Solutions Group So first let me extend a warm welcome from Mark and myself for joining us here this morning and thank you for coming. We are here today to talk about a new class of memory and storage technology that Intel and Micron have been working on for some time. As you may know, Intel and Micron have had a collaboration in non-volatile memory for the last decade. And we worked on a number of different technologies as part of that collaboration and you've seen the NAND technologies brought to market. But this is actually different from that. This is a fundamentally different technology that we call 3D XPoint. And you will have a much better understanding of why we call it 3D XPoint in the next few minutes. But it is fundamentally a different technology from the technologies that we're used to in storage NAND technology or in traditional memory technologies, both from the physics in the way it operates, as well as the attributes that it brings to the computing system, the speed and the performance and the capacity, density of the memory technology. And it's the first time a new class of memory technology has been brought to market in quite some time. And we thought we might take a moment and put that in perspective. Mark Durcan - CEO and Director Yes, thanks Rob, and thank you all for coming. It's really amazing to think that in the 50, 65 plus years since the invention of the transistor back in 1947, we have really only had seven different classes of fundamental different types of memory in the industry. And each of those memory classes has really brought different attributes for the compute hierarchy or to the way we process data and way we retrieve, store and retrieve data. If you go way back in the beginning, you had early read-only memories that were relatively dense, but could be written once and really didn’t have the ability to feed data at a high speed to a processing unit. Overtime, we had SRAMs that were much faster but volatile, so the data came and went, you had to restore the data overtime. We had, one of my favorite memories, DRAM, which is a system main memory today in many-many applications and has a nice combination of speed and density but not non-volatility. And so overtime we had different kinds of non-volatile memory. And when I joined the industry over 30 years ago in 1984 we had the first NOR Flash product into the market and that was interesting because it brought reprogrammable non-volatile memory in a way that could interface directly with a processing unit. And then most recently a NAND Flash, way back 2.5 decades ago. So Rob is right, when we talk about what we're doing today, introducing a new class of memory, it truly is a revolutionary and very-very exciting because it's bringing not only a new set of characteristics to the marketplace, but it's going to enable a whole new universe of applications and memory architectures and compute architectures that I think are really going to change the world and way we think about what's possible in electronics. More